http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2020371153-A1
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assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_ac31afbea1cbbb03498644721ffb4a62 |
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classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02F1-0327 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01R31-2637 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H04B10-07953 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02F1-0121 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02F1-2257 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02F1-225 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02F1-0123 |
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filingDate | 2020-05-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8a51537ba3c64cb749e6fbcb179885e7 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_45ece230aa19080c97fccfd0b453648b http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9dd86df3d92773d189720c41e62207d8 |
publicationDate | 2020-11-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | US-2020371153-A1 |
titleOfInvention | Fabrication variation analysis method of silicon Mach-Zehnder electro-optic modulator |
abstract | The invention discloses a fabrication process variation analysis method of a silicon-based Mach-Zehnder electro-optic modulator. The method includes the following steps: (1) use the input reflection coefficient S11 to characterize and quantify the reflection deviation characteristics of the driving signal on the traveling wave electrode; (2) measure and quantify the modulated signal characteristics of the silicon Mach-Zehnder electro-optic modulator. The modulated signal characteristics include transmission characteristics, vertical direction characteristics and horizontal direction characteristics; (3) Pearson correlation coefficient and partial correlation coefficient are introduced. By analyzing the value and variation trend of Pearson correlation coefficient and partial correlation coefficient, the relationship between the deviation of the driving signal reflection and the deviation of the modulated signal characteristics is analyzed. The method of the present invention can establish the relationship between fabrication process control and performance analysis at the device level, and help to develop device designs with better fabrication tolerances. |
priorityDate | 2019-05-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
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isDiscussedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419559541 http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID5461123 |
Total number of triples: 26.