http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2020371153-A1

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filingDate 2020-05-20-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8a51537ba3c64cb749e6fbcb179885e7
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publicationDate 2020-11-26-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-2020371153-A1
titleOfInvention Fabrication variation analysis method of silicon Mach-Zehnder electro-optic modulator
abstract The invention discloses a fabrication process variation analysis method of a silicon-based Mach-Zehnder electro-optic modulator. The method includes the following steps: (1) use the input reflection coefficient S11 to characterize and quantify the reflection deviation characteristics of the driving signal on the traveling wave electrode; (2) measure and quantify the modulated signal characteristics of the silicon Mach-Zehnder electro-optic modulator. The modulated signal characteristics include transmission characteristics, vertical direction characteristics and horizontal direction characteristics; (3) Pearson correlation coefficient and partial correlation coefficient are introduced. By analyzing the value and variation trend of Pearson correlation coefficient and partial correlation coefficient, the relationship between the deviation of the driving signal reflection and the deviation of the modulated signal characteristics is analyzed. The method of the present invention can establish the relationship between fabrication process control and performance analysis at the device level, and help to develop device designs with better fabrication tolerances.
priorityDate 2019-05-20-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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