| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_fa85b9509fe8e25d0162494c3a8bd37a |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C07F7-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08F4-6592
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C07F17-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-405
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C07F7-28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45553
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-455
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08F4-64082 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C07F7-28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08F4-6592
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08F4-64 |
| filingDate |
2020-08-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8ccdae3f6313079cc918d8208a9280e7
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ed0c38ba478805dd34f66552faa9bf7e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_055b1842f22e87ca0cb6bfe96035f946 |
| publicationDate |
2020-11-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2020361969-A1 |
| titleOfInvention |
Group 4 metal element-containing compounds, method of preparing the same, precursor compositions including the same for forming a film, and method of forming a film using the same |
| abstract |
The present disclosure provides a novel Group 4 metal element-containing compound, a method of preparing the Group 4 metal element-containing compound, a precursor composition including the Group 4 metal element-containing compound for film deposition, and a method of forming a Group 4 metal element-containing film using the Group 4 metal element-containing compound. The novel Group 4 metal element-containing compound according to embodiments of the present disclosure makes it possible to form a Group 4 metal element-containing film by atomic layer deposition at a higher temperature than conventionally known Group 4 metal element-containing compounds. |
| priorityDate |
2018-02-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |