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filingDate 2019-04-26-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 2020-10-29-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-2020343376-A1
titleOfInvention Semiconductor device structure and method for forming the same
abstract A semiconductor device structure is provided. The semiconductor device structure includes a substrate and a dielectric fin structure over the substrate. The semiconductor device structure also includes a semiconductor fin structure adjacent to the dielectric fin structure. The semiconductor device structure also includes a metal gate stack across the dielectric fin structure and the semiconductor fin structure. The semiconductor device structure also includes a source/drain feature over the semiconductor fin structure. The semiconductor device structure also includes a source/drain spacer interposed between the source/drain feature and the dielectric fin structure.
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