| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_9b11ce0419f252daab5cc5a12fee8c1c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_27e1ea5f65e8f958e48f1a9d53fdbb45
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_b9162702616c1d5c13bc2c9629b06899 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-45 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-6603
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-167
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-868
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-6609
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1602
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0665 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-16
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-868
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-66 |
| filingDate |
2020-04-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f311ef1af9c055511d650a935d269d79
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8c152f6a850d92b2f6fa81c1fe665618 |
| publicationDate |
2020-10-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2020343344-A1 |
| titleOfInvention |
Contact structures for n-type diamond |
| abstract |
Electronic devices and more particularly diamond-based electronic devices and corresponding contact structures are disclosed. Electrical contact structures to diamond layers, including n-type, phosphorus doped single-crystal diamond are disclosed. In particular, electrical contact structures are formed through an arrangement of one or more nanostructured carbon layers with high nitrogen incorporation that are provided between metal contacts and n-type diamond layers in diamond-based electronic devices. Nanostructured carbon layers may be configured to mitigate reduced phosphorus incorporation in n-type diamond layers, thereby providing low specific contact resistances for corresponding devices. Diamond p-i-n diodes for direct electron emission applications are also disclosed that include electrical contact structures with nanostructured carbon layers. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11222956-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-113257974-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11152483-B2 |
| priorityDate |
2019-04-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |