| abstract |
Embodiments of three-dimensional ( 3 D) memory devices and fabrication methods thereof are disclosed. In an example, a 3 D memory device includes NAND memory cells and a first bonding layer including first bonding contacts. The 3 D memory device also includes a second semiconductor structure including DRAM cells and a second bonding layer including second bonding contacts. The 3 D memory device also includes a third semiconductor structure including SRAM cells, a third bonding layer including third bonding contacts, and a fourth bonding layer including fourth bonding contacts. The third and fourth bonding layers are on both sides of the SRAM cells. The semiconductor device further includes a first bonding interface between the first and third bonding layers. The first bonding contacts are in contact with the third bonding contacts at the first bonding interface. The 3 D memory device further includes a second bonding interface between the second and fourth bonding layers. The second bonding contacts are in contact with the fourth bonding contacts at the second bonding interface. |