| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_fd446fb0d73aa96d044fea2eaa3c8ebc |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H05B3-16
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81C2201-0181
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H05B2203-017
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81B2201-0214
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H05B3-265 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81C1-00095
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01N27-16
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H05B3-141
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H05B3-148 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01N27-16
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H05B3-14 |
| filingDate |
2017-05-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b93803268f7f83986c18c31c8c6713ef
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_70ac2441fc6c373f6a838d66a3d22e96 |
| publicationDate |
2020-10-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2020323041-A1 |
| titleOfInvention |
A method for producing an electromigration-resistant crystalline transition-metal silicide layer, a corresponding layer sequence, and a micro heater |
| abstract |
A method for producing an electromigration-resistant crystalline transition-metal silicide layer of a layer sequence, for example, to provide a micro heater includes, supplying a semiconductor substrate including an electrically insulating layer; physically depositing a transition metal on the electrically insulating layer; carrying out a plasma-enhanced chemical vapor deposition while forming an inert gas plasma; conveying monosilane to the inert gas plasma, with the monosilane decomposing into silicon and hydrogen and the silicon in the gaseous phase entering into a chemical reaction with the transition metal in order to form the electromigration-resistant crystalline transition-metal silicide layer. |
| priorityDate |
2016-05-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |