| abstract |
The present technology relates to a solid-state imaging device and electronic equipment to suppress degradation of Dark characteristics. A photoelectric converting unit configured to perform photoelectric conversion, and a PN junction region including a P-type region and an N-type region on a side of a light incident surface of the photoelectric converting unit are included. Further, on a vertical cross-section, the PN junction region is formed at three sides including a side of the light incident surface among four sides enclosing the photoelectric converting unit. Further, a trench which penetrates through a semiconductor substrate in a depth direction and which is formed between the photoelectric converting units each formed at adjacent pixels is included, and the PN junction region is also provided on a side wall of the trench. The present technology can be applied, for example, to a backside irradiation type CMOS image sensor. |