| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_b2d32a1324eb3a240649ffee8d475d63 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-762 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-762
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76224
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31116
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31144 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-762
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-311 |
| filingDate |
2019-04-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_975acffad43e695886fbbeebb481de9b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5837312ce4ac4b7d5274383b0296c434 |
| publicationDate |
2020-10-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2020321240-A1 |
| titleOfInvention |
Method for forming a shallow trench structure |
| abstract |
This invention provides a method for forming a shallow trench structure, including providing a substrate, forming a patterned photoresist layer on the substrate, performing an etching process with the patterned photoresist layer as a mask to form a shallow trench structure on the substrate, and applying plasma treatment unto the substrate with plasma produced from a mixture of CF 4 and O 2 . Repeating the etching process and the plasma treatment until a shallow trench structure with a predetermined aspect ratio is obtained. |
| priorityDate |
2019-04-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |