abstract |
A semiconductor device having a copper wiring and an insulating layer provided on the copper wiring, where after storage in air with a humidity of 5% for 168 hours at 150° C., the area of void portion of the copper wiring is 10% or less at the copper wiring surface in contact with the insulating layer. The insulating layer contains at least one polyimide that has (i) a structure derived from 4,4′-oxydiphthalic acid dianhydride and a structure derived from 4,4′-diaminodiphenyl ether; or (ii) a structure derived from 3,3′4,4′-biphenyltetracarboxylic acid dianhydride and a structure derived from 4,4′-diaminodiphenyl ether; or (iii) a structure derived from 4,4′-oxydiphthalic acid dianhydride and a structure derived from 2,2′-dimethyl-4,4′-diaminobiphenyl. |