| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_620d8e0b5ce849d2ace9151c7b23d596 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-2009
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-04257
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-04252
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-1039
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-22 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-0014
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-34333
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-2009
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-0265
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-50
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-22
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-026
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-04257
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-2202 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-026
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-343
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-50
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-22
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-042 |
| filingDate |
2017-11-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_65b7c60abb412629af3b41149f612574
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_97b9e14dacdb3020fb49214b76398c09
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_032c3c97766c397a91159b511d9e06e8 |
| publicationDate |
2020-09-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2020295529-A1 |
| titleOfInvention |
Integrated semiconductor optical amplifier and laser diode at visible wavelength |
| abstract |
An integrated semiconductor optical amplifier-laser diode (SOA-LD) device includes a laser diode (LD) section fabricated on a substrate, a semiconductor optical amplifier (SOA) section fabricated on the substrate adjacent to the LD section; and a trench formed at least partially between the LD section and SOA section to electrically isolate the LD section and the SOA section while maintaining optical coupling between the LD section and the SOA section. |
| priorityDate |
2016-11-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |