http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2020294722-A1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_04cb2b47edb7fd1c0f1b4629768cfa14 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01G4-252 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01G4-085 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-60 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01G4-306 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01G4-33 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L49-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01G4-08 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01G4-33 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01G4-30 |
| filingDate | 2019-03-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6fcd889222170c4c4f9940b54d23a1c3 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_05c988b8c52f0a55673dbd4905e781b7 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5bfc5675d590a17137bbdef9602d0a9b http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d94edfa6343669c5a8b045df7a0c9540 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_dc1d6a98ddd798d72739d9ddf7914b0e |
| publicationDate | 2020-09-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | US-2020294722-A1 |
| titleOfInvention | Low temperature sub-nanometer periodic stack dielectrics |
| abstract | MIM capacitors using low temperature sub-nanometer periodic stack dielectrics (SN-PSD) containing repeating units of alternating high dielectric constant materials sublayer and low leakage dielectric sublayer are provided. Every sublayer has thickness less than 1 nm (sub nanometer). The high dielectric constant materials could be one or more different materials. The low leakage dielectric materials could be one or more different materials. For the SN-PSD containing more than two different materials, those materials are deposited in sequence with the leakage current of the materials from the lowest to the highest and then back to the second-lowest, or with the energy band gap of the materials from the widest to the narrowest and then back to the second widest in each periodic cell. A layer of low leakage current dielectric materials is deposited on and/or under SN-PSD. The dielectric constant of SN-PSD is much larger than that of the component oxides and can be readily deposited at 250° C. using atomic layer deposition (ALD). The ALD deposition cycle could be 20-1000 cycles. The deposition technology is not limited to ALD, could be thermal oxidation, chemical vapor deposition (CVD), plasma enhanced chemical vapor deposition (PECVD) and other thermal source assisted deposition. |
| priorityDate | 2019-03-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 38.