Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c142e57962f1e8e9a64926e72f1fd250 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-30 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-305 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-325 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-14 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-145 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-0062 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-32 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-14 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-32 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-30 |
filingDate |
2020-05-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_44e630fbc47255f28e1db8395fae1a3f http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_44f6d7f1fedcf26eeb6dae7c70dccb7f |
publicationDate |
2020-08-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
US-2020274028-A1 |
titleOfInvention |
Semiconductor device |
abstract |
A semiconductor device is provided. The semiconductor device includes a first semiconductor layer; a second semiconductor layer on the first semiconductor layer; an active region between the second semiconductor layer and the first semiconductor layer; an electron blocking structure between the active region and the second semiconductor layer; a first In-containing layer between the active region and the electron blocking structure; and a second In-containing layer between the electron blocking structure and the second semiconductor layer; wherein the first In-containing layer and the second In-containing layer each includes indium, aluminum and gallium, the first In-containing layer has a first aluminum content, the second In-containing layer has a second aluminum content, and the second aluminum content is less than the first aluminum content. |
priorityDate |
2017-11-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |