| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1e6ddf53a7a8db01a5314268a2c323b9 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81B2203-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81B2201-0235
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81C1-00031
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81C2203-036
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81C2201-0166
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81B2201-0242
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81C2201-115 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81C1-00166
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81B3-001
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81B3-0089
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81B3-0056 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B81B3-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B81C1-00 |
| filingDate |
2020-02-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_aa21891848dafa097a633b0586b5c075
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_25d422bff1cc39c11d610e68f22f9a74 |
| publicationDate |
2020-08-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2020270123-A1 |
| titleOfInvention |
Modification to rough polysilicon using ion implantation and silicide |
| abstract |
A modification to rough polysilicon using ion implantation and silicide is provided herein. A method can comprise depositing a hard mask on a single crystal silicon, patterning the hard mask, and depositing metal on the single crystal silicon. The method also can comprise forming silicide based on causing the metal to react with exposed silicon of the single crystal silicon. Further, the method can comprise removing unreacted metal and stripping the hard mask from the single crystal silicon. Another method can comprise forming a MEMS layer based on fusion bonding a handle MEMS with a device layer. The method also can comprise implanting rough polysilicon on the device layer. Implanting the rough polysilicon can comprise performing ion implantation of the rough polysilicon. Further, the method can comprise performing high temperature annealing. The high temperature can comprise a temperature in a range between around 700 and 1100 degrees Celsius. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2022135397-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11655138-B2 |
| priorityDate |
2019-02-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |