Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6b822ee046eb6c45d1e3bd9ce9c1782e |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B41-70 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78648 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-10805 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-30 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0688 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-8221 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02178 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02126 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0214 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31155 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02323 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02337 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7869 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02266 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02274 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66969 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-66 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-108 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 |
filingDate |
2018-08-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_51d0e8b38b8c3e72db547058fe20d451 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b5c12387c380b082acfe1c5c3a847b76 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_21747acfb77b0d181ab4dff0d66658d4 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e3139340ae160e354c7b630af45bfe6c http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e612d86de1455fa5cb38cf2dd1e80739 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b906246ac186fa4fdb0b671631283d57 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c830a7b361e431f3d4c3f87bccd0fb54 |
publicationDate |
2020-08-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
US-2020266289-A1 |
titleOfInvention |
Semiconductor device and method for manufacturing semiconductor device |
abstract |
A semiconductor device with favorable electrical characteristics and reliability is provided. A first insulator is formed. A second insulator is formed over the first insulator. An island-shaped oxide is formed over the second insulator. A stacked body of a third insulator and a conductor is formed over the oxide. The resistance of the oxide is selectively reduced by forming a film containing a metal element over the oxide and the stacked body. After a fourth insulator is formed over the second insulator, the oxide, and the stacked body, an opening portion exposing the second insulator is formed in the fourth insulator. A fifth insulator is formed over the second insulator and the fourth insulator. Oxygen introduction treatment is performed on the fifth insulator. |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2022208856-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11502127-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2020403076-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2020365701-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11152367-B1 |
priorityDate |
2017-09-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |