| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_063a1b324005ddc15e16e7529c6258c4
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5e5c121269689cbab9b3a4548b15caf3 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B15-22
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B15-007
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-64
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-38
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-406
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B28-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B25-18
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B19-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B25-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B19-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B15-36 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B29-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B15-36
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B15-00 |
| filingDate |
2020-02-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_30d5d8370dbd75a6f7078ab1642de589
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_78384471e2b958144330b870daa480b8
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_98b26e916ca796bf8a6f5dcd726b1a74
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4dab748f98d7e973c58a478136f5852f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_305947e31f8d45ac3191dec7bdcbeef9
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7c3b89782e24efe23b12dec693eca023 |
| publicationDate |
2020-08-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2020263320-A1 |
| titleOfInvention |
Method for producing group iii nitride crystal and seed substrate |
| abstract |
An object of the present invention is to provide a method for producing a group III nitride crystal in which generation of breaking or cracks is less likely to occur. To achieve the object, the method for producing a group III nitride crystal includes: seed crystal preparation including disposing a plurality of crystals of a group III nitride as a plurality of seed crystals on a substrate; and crystal growth including growing group III nitride crystals by contacting a surface of each of the seed crystals with a melt containing at least one group III element selected from gallium, aluminum, and indium and an alkali metal in an atmosphere containing nitrogen. In the seed crystal preparation, the plurality of seed crystals are disposed within a hexagonal region provided on the substrate. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11408089-B2 |
| priorityDate |
2019-02-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |