http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2020248074-A1

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classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32134
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classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-306
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09K13-00
filingDate 2020-01-15-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_192e44f2bee2076f489bd849bc78e0ba
publicationDate 2020-08-06-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-2020248074-A1
titleOfInvention Silicon etchant with high Si/SiO2 etching selectivity and Application thereof
abstract A silicon etchant with high Si/SiO2 etching selectivity and its application are disclosed. The silicon etchant comprises at least one ketal and at least one quaternary ammonium hydroxide compound. The weight percentage of the ketal is 20˜99 wt. % based on the total weight of the etchant and the weight percentage of the quaternary ammonium hydroxide compound is 0.1˜10 wt. % based on the total weight of the etchant.
priorityDate 2019-02-01-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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