| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_51d028c578ae85cb937b5b34a5129fbc |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-2255
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4236 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-516
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78645
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7827
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66666
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-6684
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78391
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78642 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-66
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 |
| filingDate |
2017-12-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1bbeeb385485ef93762ab37712bbc67b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d7a5c53cc886427c0f191656e3694f6b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d3ae700802cfc19488174d4a7eceb587
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e13f3225a0436ca031125a806a126533
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d3cfc15b6b9770c53cb4694a52252153 |
| publicationDate |
2020-07-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2020235244-A1 |
| titleOfInvention |
Low resistance field-effect transistors and methods of manufacturing the same |
| abstract |
Low resistance field-effect transistors and methods of manufacturing the same are disclosed herein. An example field-effect transistor disclosed herein includes a substrate and a stack above the substrate. The stack includes an insulator and a gate electrode. The example field-effect transistor includes a semiconductor material layer in a cavity in the stack. In the example field-effect transistor, a region of the semiconductor material layer proximate to the insulator is doped with a material of the insulator. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11302716-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11282848-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2023253340-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2022344513-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10964721-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11195858-B2 |
| priorityDate |
2017-12-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |