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filingDate 2020-01-08-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 2020-07-23-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-2020235235-A1
titleOfInvention Power Semiconductor Device and Method of Forming a Power Semiconductor Device
abstract A method of forming a power semiconductor device includes: arranging a control electrode at least partially on or inside a semiconductor body; forming elevated source regions in the semiconductor body by: implanting first conductivity type dopants into the semiconductor body; forming a recess mask layer covering at least areas of intended source regions; and removing portions of the semiconductor body uncovered by the recess mask layer to form the elevated source regions and recessed body regions at least partially between the source regions. A dielectric layer is formed on the semiconductor body. A contact hole mask layer is formed on the dielectric layer. Portions of the dielectric layer uncovered by the contact hole mask layer are removed to form a contact hole which is filled at least partially with a conductive material to establish an electrical contact with at least a portion of the elevated source and recessed body regions.
priorityDate 2019-01-18-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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