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filingDate 2020-03-30-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7943ff522733fe3b43728d161fa83645
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publicationDate 2020-07-16-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-2020227630-A1
titleOfInvention Magnetic tunnel junction device with spin-filter structure
abstract A magnetic device includes: a conductive layer into which current is injected in a first direction, the conductive layer causing spin Hall effect or Rashba effect; a ferromagnetic layer disposed in contact with the conductive layer such that the ferromagnetic layer and the conductive layer are stacked on each other, a magnetization direction of the ferromagnetic layer being switched; and a spin filter structure having a fixed magnetization direction, the spin filter structure being disposed on at least one of the opposite side surfaces of the first direction of the conductive layer to inject spin-polarized current into the conductive layer.
priorityDate 2017-01-03-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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