Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_88fc7f9eb617072238851d46591a0c76 http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_543f81076a0539dda3718ef97249ec66 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-30 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-09 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02126 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31111 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02164 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02167 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0217 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0223 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-10897 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-50 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-10805 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-10894 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-311 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-108 |
filingDate |
2020-03-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1185413d865e3ac0a238715cd299b106 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4eddee2febca50ed279991db777f7b5b |
publicationDate |
2020-07-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
US-2020227420-A1 |
titleOfInvention |
Semiconductor device and method for fabricating the same |
abstract |
A method for fabricating semiconductor device includes the steps of: providing a substrate having a memory region and a logic region; forming a stack structure on the memory region and a gate structure on the logic region; forming a first cap layer on the stack structure and the gate structure; performing an oxidation process to form an oxide layer on the first cap layer; forming a second cap layer on the oxide layer; and removing part of the second cap layer, part of the oxide layer, and part of the first cap layer on the logic region to form a spacer adjacent to the gate structure. |
priorityDate |
2018-04-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |