Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_ddbd9538efce6e134d471b912946264e |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31116 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02274 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0337 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0332 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28568 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-40114 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32139 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32135 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32136 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02164 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0217 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31144 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-285 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-033 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-311 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3213 |
filingDate |
2020-03-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5cff27486c0b8d2b6e85238c0855e717 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fc5a0e266166dee5fa463bafcd92d149 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c08c2bf830cf607142b1887691e02f96 |
publicationDate |
2020-07-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
US-2020219733-A1 |
titleOfInvention |
Semiconductor device and manufacturing method thereof |
abstract |
A semiconductor device is provided. The semiconductor device includes a core structure, a first pattern and a second pattern. The core structure is disposed on a substrate. The first pattern covers a sidewall of a bottom portion of the core structure. The top surface of the first pattern is lower than a top surface of the core structure. The second pattern is disposed on the first pattern and covering a top portion of the core structure. A sidewall of the top portion of the core structure and the top surface of the core structure are covered by the second pattern. The second pattern has an upper portion tapered away from the substrate. A material of the first pattern is different from a material of the second pattern. |
priorityDate |
2017-09-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |