| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_89afae566b725ae78e20cf972d9bcdc7 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02381
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-30612
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-30604
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09K13-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09K13-08
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02532 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09K13-08
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-306 |
| filingDate |
2019-12-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5d83fb7146e435aaa237f3b002482886
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_acf2fee3c3ab136d773cd735e5e7d1bd
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8b5decb61eb61a3ad4e6238050a2fe1a |
| publicationDate |
2020-07-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2020211856-A1 |
| titleOfInvention |
Etching solution, and method of producing semiconductor element |
| abstract |
A SiGe compound etching solution for selectively etching a compound represented by general formula Si 1-x Ge x (provided that x is 0 or more and less than 1) relative to Si, Ge and an oxide thereof, the SiGe compound etching solution including periodic acid and fluoride. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2023064145-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2023286666-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2023136591-A1 |
| priorityDate |
2018-12-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |