Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_f0c17fb0be15e18e811be589c822b4c8 |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-305 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L51-52 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-24 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-145 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-0095 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-025 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02B27-0172 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-305 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-266 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K50-80 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-44 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-0062 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-26546 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-44 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-52 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-24 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G02B27-01 |
filingDate |
2020-02-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ffc03c3d62d128b0bc737a7afa6a4ebf http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_501667a0e1a20b84f281469b2fd96a7f http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_597f971efc64028829ba43b6fea06f07 |
publicationDate |
2020-06-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
US-2020194623-A1 |
titleOfInvention |
Reduction of surface recombination losses in micro-leds |
abstract |
Disclosed herein are systems and methods for reducing surface recombination losses in micro-LEDs. In some embodiments, a method includes increasing a bandgap in an outer region of a semiconductor layer by implanting ions in the outer region of the semiconductor layer and subsequently annealing the outer region of the semiconductor layer to intermix the ions with atoms within the outer region of the semiconductor layer. The semiconductor layer includes an active light emitting layer. A light outcoupling surface of the semiconductor layer has a diameter of less than 10 μm. The outer region of the semiconductor layer extends from an outer surface of the semiconductor layer to a central region of the semiconductor layer that is shaded by a mask during the implanting of the ions. |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11581457-B1 |
priorityDate |
2018-03-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |