Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_b6b16422602e3ef74609359047b3a3f2 |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02181 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02178 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02178 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4908 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78603 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02282 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-401 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66757 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28158 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78675 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02194 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02181 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-40 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-66 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-49 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 |
filingDate |
2019-02-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b1fb68b2057511dccbdfcf39c64670e8 |
publicationDate |
2020-06-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
US-2020176579-A1 |
titleOfInvention |
Flexible substrate with high dielectric-constant film and manufacturing method thereof |
abstract |
The present invention provides a flexible substrate with a high dielectric-constant film and a manufacturing method thereof. The manufacturing method comprises following steps: providing a flexible substrate; forming a polysilicon layer on the flexible substrate; coating an HfAlOx solution on the polysilicon layer and forming an HfAlOx insulating layer by baking or annealing the HfAlOx solution; forming a metal gate electrode on the HfAlOx insulating layer; and doping and activating the polysilicon layer to form a source/drain electrode. The metal gate electrode is spaced apart from the source/drain electrode by the HfAlOx insulating layer. |
priorityDate |
2018-12-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |