Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6af9a57049d2d91c036d4f5ab49154cb |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-0557 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-05567 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L24-05 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-0391 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-05548 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-0239 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-02381 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-02311 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-02313 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-02372 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-0235 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-1421 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-0231 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-481 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-66 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L24-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L24-05 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76898 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31138 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31144 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-311 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-48 |
filingDate |
2018-11-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_572a74ca8320b053513f2bd1245a2ffd http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c6671cb451573967b11538b5a79be302 |
publicationDate |
2020-06-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
US-2020176312-A1 |
titleOfInvention |
Through-substrate via structures in semiconductor devices |
abstract |
A semiconductor device is provided that includes a substrate, an integrated circuit with a conductive member and a through-substrate-via (TSV) structure. The substrate includes a front surface and a back surface that is opposite the front surface. The integrated circuit with the conductive member is formed over the front surface of the substrate. The TSV structure having vertical sidewalls is formed in the back surface of the substrate connecting with the conductive member. The TSV structure includes a tapered first insulation layer, a conformal conductive layer and a second insulation layer, with the conformal conductive layer positioned between the first and second insulation layers. The conformal conductive layer is electrically connected to the conductive member. |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2022133756-A1 |
priorityDate |
2018-11-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |