| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_8205ec6ee1cd95eb60a03826535bad97 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08G2261-314
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08G2261-312
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08G2261-228
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08G2261-3162
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08G2261-3424
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0271 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-162
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-168
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-094
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-11
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09D165-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08L61-18
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0271
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08G12-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08G10-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08G61-12 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08G61-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-16
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-11
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09D165-00 |
| filingDate |
2018-06-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6a6340b2d48c7f6075ab2e89f3b8dc57
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1583171c96e69dd71dd78a7275efc5d1 |
| publicationDate |
2020-06-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2020174370-A1 |
| titleOfInvention |
Composition for forming resist underlayer film having improved flattening properties |
| abstract |
A method for reducing the level difference (iso-dense bias) (reverse bump) of a resist underlayer film formed on a semiconductor substrate having a stepped portion and a non-stepped portion by 5 nm or more, which comprises a step of applying the composition to an upper surface of the semiconductor substrate having a stepped portion and a non-stepped portion. A method for reducing the level difference (iso-dense bias) of a resist underlayer film, comprising the steps of adding a fluorine-containing surfactant to a resist underlayer film-forming composition containing a polymer and a solvent and applying the composition containing the fluorine-containing surfactant to an upper surface of a semiconductor substrate having a stepped portion and a non-stepped portion. The level difference of a resist underlayer film formed on a semiconductor substrate between a stepped portion and a non-stepped portion (i.e., reverse bump) is reduced by 5 nm or more. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11592747-B2 |
| priorityDate |
2017-06-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |