| abstract |
A vapor phase growth device includes a flow channel defining a space through which a source gas for forming an epi layer flows, a susceptor configured to hold a substrate in a state where the substrate faces the space, and a first member disposed vertically above and opposite to the susceptor, the first member having a thermal expansion coefficient not less than 0.7 times and not more than 1.3 times the thermal expansion coefficient of the substrate. The flow channel includes a holding portion configured to hold the first member. |