http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2020161466-A1

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filingDate 2019-11-20-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_29a8784ccc4c269fe919c056c6a8032b
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publicationDate 2020-05-21-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-2020161466-A1
titleOfInvention Silicon carbide semiconductor device integrating clamper circuit for clamping voltage
abstract The present invention provides a silicon carbide (SiC) semiconductor device integrating a metal-oxide-semiconductor field-effect transistor (MOSFET) and a bidirectional voltage clamping circuit. An object of protecting a device is achieved by using the simple structure above, effectively preventing device damage that may be caused by a positive overvoltage and a negative overvoltage between a gate and a source.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11756954-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-3979331-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-3979330-A1
priorityDate 2018-11-21-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 28.