| abstract |
Group 4 transition metal-containing film forming compositions are disclosed. The Group 4 transition metal-containing film forming compositions comprise Group 4 transition metal precursors having the formula L 2 -M-C 5 R 4 —[(ER 2 ) m -(ER 2 ) n —O]—, wherein M is Ti, Zr, or Hf bonded in an η 5 bonding mode to the cyclopentadienyl group; each E is independently C, Si, B or P; m and n is independently 0, 1 or 2; m+n>1; each R is independently a hydrogen or a C 1 -C 4 hydrocarbon group; each L is independently a −1 anionic ligand selected from the group consisting of NR′ 2 , OR′, Cp, amidinate, β-diketonate or keto-iminate, wherein R′ is H or a C 1 -C 4 hydrocarbon group; and adjacent R's may be joined to form a hydrocarbyl ring. Also disclosed are methods of synthesizing and using the disclosed precursors to deposit Group 4 transition metal-containing films on the substrates via vapor deposition processes. |