| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_36333273e27f0db23ddddbf80ba79ba7 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L43-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01F10-3286
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N50-85 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L43-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01F10-329
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-228
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01F10-3259
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C11-18
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C11-161
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L43-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B61-22
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N50-85
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N50-80
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N50-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N50-01
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01F41-307 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01F10-32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L43-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L43-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C11-16
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-22 |
| filingDate |
2019-06-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2aa2190a34121d36d2ac30179ec59ed5
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_43e7267962db91efab1ef354c19b1288 |
| publicationDate |
2020-04-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2020136016-A1 |
| titleOfInvention |
Magnetic tunnel junction structures and related methods |
| abstract |
The disclosure is directed to spin-orbit torque (“SOT”) magnetoresistive random-access memory (“MRAM”) (“SOT-MRAM”) structures and methods. A SOT channel of the SOT-MRAM includes multiple heavy metal layers and one or more dielectric dusting layers each sandwiched between two adjacent heavy metal layers. The dielectric dusting layers each include discrete molecules or discrete molecule clusters of a dielectric material scattered in or adjacent to an interface between two adjacent heavy metal layers. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11342015-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2022165320-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2022148635-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11069743-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2022310146-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11600769-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11790968-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11514963-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11514962-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-112054116-A |
| priorityDate |
2018-10-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |