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filingDate 2018-06-28-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_36016a844e8897bbe2f2e1f1d910c314
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publicationDate 2020-04-30-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-2020135461-A1
titleOfInvention Single Crystal Substrate And Silicon Carbide Substrate
abstract A single crystal substrate is provided and is characterized in that the single crystal substrate has a foundation substrate provided with a plurality of first grooves, which include a first crystal face and a second crystal face opposed to the first crystal face in an inner face thereof, and the extending direction of which is a <110> direction, and a plurality of second grooves, the extending direction of which intersects with the first grooves, and in which the first grooves are formed in a displaced manner in a depth direction, and a transverse cross-sectional shape of the second groove is a shape in which straight lines are open at an opening angle less than 180°. Further, it is preferred that an angle formed by the first crystal face and the second crystal face is more than 70.6°.
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type http://data.epo.org/linked-data/def/patent/Publication

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