Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_ab054d4fd1810c2c2350c52d00de0add |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-841 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-828 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-826 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-245 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-063 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-8836 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-8833 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-883 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L45-085 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L45-1675 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L45-1246 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L45-1253 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L45-1233 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L45-146 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L45-00 |
filingDate |
2018-10-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ed30da29cf82980ab0f6fff9744d8f45 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_786d6dbca6db4d97cd9686e777d7b58a http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3846f9578f87e3c6ad10b6cb2d938bfb http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0b4aa46b07dec908f6d95702b30ccbce |
publicationDate |
2020-04-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
US-2020127200-A1 |
titleOfInvention |
Correlated electron material (cem) devices with contact region sidewall insulation |
abstract |
Subject matter disclosed herein may relate to fabrication of a correlated electron material (CEM) switch. In particular embodiments, an insulative material may be formed on or over a sidewall portion of a conductive contact region. The insulative material may insulate the conductive contact region from resputtered CEM occurring during a physical etch of a CEM film. |
priorityDate |
2018-10-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |