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publicationDate 2020-04-23-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-2020127141-A1
titleOfInvention Method for manufacturing thin film transistor, thin film transistor, and display panel
abstract The portion of the active layer of the thin film transistor, facing the gate electrode, defines a channel region, and the portions of the active layer located at two sides of the channel region are transformed to conductors.
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