| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e757fd4fedc4fe825bb81b1b466a0947 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76849
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-53295
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76834
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-7685
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76832
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76877 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76802
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76807
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-5222
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-5226
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-7682
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76829
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-53295 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-522
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 |
| filingDate |
2018-10-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_59b41bef45d642893d7fdef9fc214302
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bb8b9e30759b962bb00b0f75b3c8c12c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9145df20c729de30abe8cf8a41705ce3 |
| publicationDate |
2020-04-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2020126842-A1 |
| titleOfInvention |
Airgap vias in electrical interconnects |
| abstract |
Multiple interconnect structures with reduced TDDB susceptibility and reduced stray capacitance are disclosed. The structures have one or more pairs of layers (an upper and a lower layer) that form layered pairs in the structure. In each of the upper and lower layers, dielectric material separates an upper pair of interconnects from a lower pair of interconnects or from other conductive material. Pairs of vias pass through the dielectric and mechanically and electrically connect the respective sides of the upper and lower sides of the interconnect. A gap of air separates all or part of the pair of vias and the electrical paths the vias are within. In alternative embodiments, the airgap may extend to the bottom of the vias, below the tops of the lower pair of interconnects, or deeper into the lower layer. Alternative process methods are disclosed for making the different embodiments of the structures. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-116057698-A |
| priorityDate |
2018-10-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |