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publicationDate 2020-03-26-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-2020098980-A1
titleOfInvention Method for forming high density structures with improved resist adhesion to hard mask
abstract A method for manufacturing an array of small pitch small feature size structures on a wafer. The method includes depositing a device layer, depositing a hard mask layer over the device layer, depositing a thin SiO2 adhesion layer over the hard mask layer and then forming a photoresist mask over the SiO2 adhesion layer. The presence of the SiO2 adhesion layer prevents toppling or deformation of the photoresist mask, thereby allowing the image of the photoresist mask to be accurately and reliably transferred onto the underlying hard mask. Then, the image of the hard mask can be accurately transferred to the underlying device layer.
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