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filingDate 2018-12-28-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ee3d7d85766cb8cc506f701036810369
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publicationDate 2020-03-26-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-2020098922-A1
titleOfInvention Semiconductor device and method of manufacturing the same
abstract A semiconductor device and method of forming the same are provided. The semiconductor device includes a gate structure formed over a substrate. A spacer layer is formed on side portions of the gate structure. A first dielectric layer is formed over the gate structure. A conductive cap layer passes through the first dielectric layer and is formed over the gate structure. A top surface of the conductive cap layer is above a top surface of the spacer layer. The semiconductor device further includes a conductive layer formed over the conductive cap layer. The conductive layer is electrically coupled with the conductive cap layer.
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