| abstract |
Provided is a three-dimensional integrated circuit (3DIC) structure including a die stack structure, a metal circuit structure, and a protective structure. The die stack structure includes a first die and a second die face-to-face bonded together. The second die includes a plurality of through-substrate vias (TSVs). The metal circuit structure is disposed over a back side of the second die. The protective structure is sandwiched between and in contact with a bottom surface of the metal circuit structure and a top surface of one of the plurality of TSVs of the second die. |