| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e757fd4fedc4fe825bb81b1b466a0947 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823475 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823842
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76829
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0276
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76897
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31116 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-311
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8238
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027 |
| filingDate |
2019-11-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_92bfd0f867dd54b067d5689edcb80577
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_45869d8f3e3b7882be1e32f9ec52d142
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_851d8733807b78cd9807d39ef2ddb9b2
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_812226b15c7c2d0d7c862468d13e4c75 |
| publicationDate |
2020-03-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2020090998-A1 |
| titleOfInvention |
Self-aligned gate cap including an etch-stop layer |
| abstract |
According to embodiments of the present invention, a method of forming a self-aligned contact includes depositing an etch-stop liner on a surface of a gate cap and a contact region. A dielectric oxide layer is deposited onto the etch-stop layer. The dielectric oxide layer and the etch-stop liner are removed in a region above the contact region to form a removed region. A contact is deposited in the etched region. |
| priorityDate |
2018-06-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |