Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_36333273e27f0db23ddddbf80ba79ba7 |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-321 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-165 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-513 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823431 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-401 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-82345 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823462 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0886 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42356 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66545 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4966 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-513 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02178 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02205 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-088 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8234 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-51 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 |
filingDate |
2019-11-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_146737ffcffa448cbf60421630be3e31 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b91e82f28b6ca1b132b7bfd53ad1f640 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_dcc8c2aa231991d3f08209fc3f11c9fb http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_76219a769b166e3a7e9ad988ee368763 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_beb48613781b13d416dfec0b7497a4e0 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_db22f76d9fb4b5cb54580ca008c3f6dc http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b686f9846ed8634217bb625613e0b676 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3c27de9ab70ca903e3213ff7df2df844 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e594b5f7629277aa3ea847c47c4a1c3e |
publicationDate |
2020-03-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
US-2020083108-A1 |
titleOfInvention |
Pre-Deposition Treatment for FET Technology and Devices Formed Thereby |
abstract |
Embodiments disclosed herein relate to a pre-deposition treatment of materials utilized in metal gates of different transistors on a semiconductor substrate. In an embodiment, a method includes exposing a first metal-containing layer of a first device and a second metal-containing layer of a second device to a reactant to form respective monolayers on the first and second metal-containing layers. The first and second devices are on a substrate. The first device includes a first gate structure including the first metal-containing layer. The second device includes a second gate structure including the second metal-containing layer different from the second metal-containing layer. The monolayers on the first and second metal-containing layers are exposed to an oxidant to provide a hydroxyl group (—OH) terminated surface for the monolayers. Thereafter, a third metal-containing layer is formed on the —OH terminated surfaces of the monolayers on the first and second metal-containing layers. |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2020350414-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11289578-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11742395-B2 |
priorityDate |
2018-05-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |