| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_134e761e8dcbff4985fa1e77a9c2062e |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-50 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-208
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-0747
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-202
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-022475
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-02167
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-1864 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-0216
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-0224
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-0747 |
| filingDate |
2017-11-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_55ddf6de947817e3246d0ccda8e12c6d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_95c597c02c3a79660a63c79b28468fee
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1ba3f1d2490d3f7a0287c470f27988ea
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3d88042251c68a317086ba8a89776b2a |
| publicationDate |
2020-03-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2020075789-A1 |
| titleOfInvention |
Silicon heterojunction solar cells and methods of manufacture |
| abstract |
The present invention relates to a solar cell comprising a heterojunction photoelectric device comprising, a front electrode layer, a back electrode layer comprising a metallic contact layer, a light-absorbing silicon layer arranged between said front electrode and said back electrode layers and a doped silicon-based layer arranged between said light-absorbing silicon layer and said back electrode layer, characterized in that said heterojunction photoelectric device further comprises a wide band gap material layer having an electronic band gap greater than 1.4 eV, said wide band gap material layer being applied on a surface of the light-absorbing silicon layer between said light-absorbing silicon layer and said doped silicon-based layer. The present heterojunction layer or stack of layers is compatible with thermal annealing and firing processes at T above 600° C. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-113659044-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-7248856-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-113421944-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-111628032-A |
| priorityDate |
2016-12-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |