| abstract |
A slurry composition for a chemical mechanical polishing (CMP) process includes about 0.1% by weight to about 10% by weight of polishing particles, about 0.001% by weight to about 1% by weight of an amine compound, about 0.001% by weight to about 1% by weight of a first cationic compound that is amino acid, about 0.001% by weight to about 1% by weight of a second cationic compound that is organic acid, and about 1% by weight to about 5% by weight of polyhydric alcohol including at least two hydroxyl groups. |