Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_8cf8d77ac0eff1767b22d2fb9445b64d |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0105 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-10677 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67098 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-3244 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32449 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67069 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67034 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-4405 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31116 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31122 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67248 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32136 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32862 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02041 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02046 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-67 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 |
filingDate |
2018-08-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_96ce915e37ee06bc793a50197ea5e091 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d469e7a12e78ae3c56d4e08b0cdef4ef http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_de62f8d9ac05a88e9421baf65a88ab1d http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c89b01281ac87b5b3e0ef3f96f4e4181 |
publicationDate |
2020-02-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
US-2020051807-A1 |
titleOfInvention |
Method to clean sno2 film from chamber |
abstract |
A method for cleaning SnO 2 residue from a processing chamber is provided as one embodiment. The method embodiment includes introducing hydrocarbon and hydrogen gas at a ratio of 1%-60% into a plasma processing system. The SnO 2 residue is etched from surfaces the processing chamber using plasma generated by a plasma source, which produces SnH 4 gas. The SnH 4 gas reacts with the hydrocarbon gas to produce an organotin compound that is volatilizable. The method further provides for evacuating the processing chamber of the organotin compound. The introduction of the hydrocarbon gas along with the hydrogen gas at the ratio of 1%-60% reduces a rate of SnH 4 gas decomposition into Sn powder. |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2021237240-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11322351-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2022072160-A3 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2022226074-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2018233398-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11355353-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11637037-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11031245-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11619925-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11784047-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11551938-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11183383-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11088019-B2 |
priorityDate |
2018-08-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |