| abstract |
Methods, systems, and devices for access line grain modulation in a memory device are described. A memory cell stack in a cross-point memory array may be formed. In some examples, the memory cell stack may comprise a storage element. A barrier material may be formed above the memory cell stack. The barrier material may initially have an undulating top surface. In some cases, the top surface of the barrier material may be planarized. After the top surface of the barrier material is planarized, a metal layer for an access line may be formed on the top surface of the barrier material. Planarizing the top surface of the barrier material may impact the grain size of the metal layer. In some cases, planarizing the top surface of the barrier material may decrease the resistivity of access lines formed from the metal layer and thus increase current delivery throughout the memory device. |