| abstract |
[Solution] Provided is a semiconductor device including a plurality of substrates that is stacked, each of the substrates including a semiconductor substrate and a multi-layered wiring layer stacked on the semiconductor substrate, the semiconductor substrate having a circuit with a predetermined function formed thereon. Bonding surfaces between at least two substrates among the plurality of substrates have an electrode junction structure in which electrodes formed on the respective bonding surfaces are joined in direct contact with each other, the electrode junction structure being a structure for electrical connection between the two substrates. In at least one of the two substrates, at least one of the electrode constituting the electrode junction structure or a via for connection of the electrode to a wiring line in the multi-layered wiring layer has a structure in which a protective film for prevention of diffusion of an electrically-conductive material constituting the electrode and the via is embedded inside the electrically-conductive material. |