| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_53367986025156d10639ca02df9234ef |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0696 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-41766
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7813
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7827
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66734
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0696
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66727
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7806
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4236
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1095
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0611
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-404
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-407 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-66
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-423
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 |
| filingDate |
2019-04-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_58a2f8ab9a7b5a2bd910a16a9f2f74d0 |
| publicationDate |
2020-01-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2020020798-A1 |
| titleOfInvention |
Power mosfet with an integrated pseudo-schottky diode in source contact trench |
| abstract |
The present embodiments provide a region of a semiconductor device comprising a plurality of power transistor cells configured as trench MOSFETs in a semiconductor substrate. At least one active power transistor cell further includes a trenched source region wherein a trench bottom surface of the trenched source contact is covered with an insulation layer and layer of a conductive material on top of the insulation layer, to function as an integrated pseudo Schottky barrier diode in the active power transistor cell. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-116682734-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2022069073-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10770581-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2021273067-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2021254616-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-113838919-A |
| priorityDate |
2018-07-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |