| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c16d2144a81bfa32a665dca1e93c3d37 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02244 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02356
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-75
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02181
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-91
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0228
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02304
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02189
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02271
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02362 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L49-02 |
| filingDate |
2019-09-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_51d7c729f69d9cc7687b3dd1e2db5de9
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9472f15d5f31426c09336bf41650191b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8d9f7b47fb2203316abb731373cae0eb
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_be81950c917aaf36966b0c542336463d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8db1e677a6b3847c17c1ccbd28e34ceb
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7b66e910a2ce16207fc6a99ea77d1846
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9a9aea3daf19a5e6e025fc0a57b05b6f |
| publicationDate |
2020-01-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2020013853-A1 |
| titleOfInvention |
Capacitor, semiconductor device and methods of manufacturing the capacitor and the semiconductor device |
| abstract |
A capacitor includes a first electrode and a second electrode spaced apart from each other, a dielectric layer disposed between the first electrode and the second electrode, and a seed layer disposed between the first electrode and the dielectric layer. The dielectric layer includes a dielectric material having a tetragonal crystal structure. The seed layer includes a seed material that satisfies at least one of a lattice constant condition or a bond length condition. |
| priorityDate |
2017-04-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |