| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6b822ee046eb6c45d1e3bd9ce9c1782e |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-11565
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-11519
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B43-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B41-30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B41-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78618
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78648
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0207
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78609
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78693
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78696
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7869
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-11521 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-11565
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-11519
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-11521
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-02 |
| filingDate |
2019-09-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b5c12387c380b082acfe1c5c3a847b76
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_50d912d77f8bc7ba4bb2eaf6e212d59f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5c691e45cec653ccc1c8a4b750ec51dc
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c28ec5bba24816522097220788a1f045
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4fbfbc4d0c1120149ae87451ba9dfcb2 |
| publicationDate |
2020-01-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2020006319-A1 |
| titleOfInvention |
Semiconductor device and method for manufacturing the same |
| abstract |
A transistor includes a first insulator over a substrate; a first oxide thereover; a second oxide in contact with at least part of the top surface of the first oxide; a first conductor and a second conductor each in contact with at least part of the top surface of the second oxide; a third oxide that is over the first conductor and the second conductor and is in contact with at least part of the top surface of the second oxide; a second insulator thereover; a third conductor which is over the second insulator and at least part of which overlaps with a region between the first conductor and the second conductor; and a third insulator which is over the third conductor and at least part of which is in contact with the top surface of the first insulator. The thickness of a region of the first insulator that is in contact with the third insulator is less than the thickness of a region of the first insulator that is in contact with the first oxide. |
| priorityDate |
2016-10-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |