| abstract |
A semiconductor device includes an SOI substrate having an active region and an element isolation region adjacent to the active region, and including a support substrate, an insulating layer formed on the support substrate, and a semiconductor layer formed on the insulating layer, a trench formed in the element isolation region, and penetrating the semiconductor layer and the insulating layer so as to reach the support substrate, an element isolation insulating film embedded in the trench, the element isolation insulating film being made of silicon oxide film, a gate electrode formed on the semiconductor layer in the active region via a gate insulating film, a sidewall film formed on both sides of the gate electrode in cross-section view, the sidewall film being comprised of a first film made of silicon oxide film, and a second film made of silicon nitride film. |