| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c186e9ae8cafab5df5c8d80cfa7b0fa1 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B11-002
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B33-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B11-003
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-8252
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3245
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-42
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01R31-2637 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B29-42
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B29-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B33-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-324
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01R31-26
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8252 |
| filingDate |
2017-09-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fe32bebb3746303450e50c9a54c8b7e9
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_36fbcbb6f61bbfe9296d51bd50b86ff0
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_28c7bdae21d5edf96ddb525dff0fe78d |
| publicationDate |
2019-12-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2019371620-A1 |
| titleOfInvention |
Semi-insulating compound semiconductor substrate and semi-insulating compound semiconductor single crystal |
| abstract |
A semi-insulating compound semiconductor substrate includes a semi-insulating compound semiconductor, the semi-insulating compound semiconductor substrate being configured such that, on a major plane having a plane orientation of (100), a standard deviation/average value of specific resistance measured at intervals of 0.1 mm along equivalent four directions in a <110> direction from a center of the major plane, and a standard deviation/average value of specific resistance measured at intervals of 0.1 mm along equivalent four directions in a <100> direction from the center of the major plane are each not more than 0.1. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10971374-B2 |
| priorityDate |
2017-09-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |