Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e757fd4fedc4fe825bb81b1b466a0947 |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42392 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-30608 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7848 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-165 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0673 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0843 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0847 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78696 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-6681 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1079 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1045 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42392 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7853 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66439 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0653 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-6653 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78618 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66553 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66545 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-775 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y10-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-167 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-167 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-10 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-08 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-66 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 |
filingDate |
2019-07-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e89aa741903ae9e663d6b0e913e32d9a http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_826b4a7de7875602d334b86fca131fc2 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fa57155a94ec485068066724e7721ca7 |
publicationDate |
2019-11-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
US-2019341467-A1 |
titleOfInvention |
Nanosheet device with close source drain proximity |
abstract |
A nanosheet transistor device having reduced access resistance is fabricated by recessing channel nanosheets and replacing the channel material with epitaxially grown doped extension regions. Sacrificial semiconductor layers between the channel nanosheets are selectively removed without damaging source/drain regions epitaxially grown on the extension regions. The sacrificial semiconductor layers are replaced by gate dielectric and gate metal layers. |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11355649-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-3907179-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10985279-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I811615-B http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10892368-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2023035270-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11495688-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11348835-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11700723-B2 |
priorityDate |
2017-12-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |